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| MITSUBISHI SEMICONDUCTOR M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54523P and M54523FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES q High breakdown voltage (BVCEO 50V) q High-current driving (IC(max) = 500mA) q With clamping diodes q Driving available with PMOS IC ouput q Wide operating temperature range (Ta = -20 to +75C) APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between standard MOS-bipolar logic IC FUNCTION The M54523P and M54523FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 2.7k between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply voltage is 50V maximum.The M54523FP is enclosed in a molded small flat package, enabling space-saving design. PIN CONFIGURATION 16 O1 15 O2 14 O3 13 O4 12 O5 11 O6 10 O7 9 IN1 1 IN2 2 IN3 3 INPUT IN4 4 IN5 5 IN6 6 IN7 7 GND 8 OUTPUT COM COMMON 16P4(P) Package type 16P2N-A(FP) CIRCUIT DIAGRAM COM OUTPUT INPUT 2.7k 5k 3k GND The seven circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Output, H Current per circuit output, L Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board Ratings -0.5 ~ +50 500 -0.5 ~ +30 500 50 1.47(P)/1.00(FP) -20 ~ +75 -55 ~ +125 Unit V mA V mA V W C C Jan.2000 MITSUBISHI SEMICONDUCTOR M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol VO Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) "H" input voltage "L" input voltage Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Limits min 0 0 0 3.85 3.4 0 typ -- -- -- -- -- -- max 50 400 Unit V IC VIH VIL Duty Cycle P : no more than 8% FP : no more than 8% Duty Cycle P : no more than 30% FP : no more than 25% IC 400mA IC 200mA mA 200 25 25 0.6 V V ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE(sat) II VF IR hFE Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Test conditions ICEO = 100A Limits min 50 -- -- -- -- -- -- 1000 typ* -- 1.2 1.0 1.2 9.5 1.4 -- 2500 max -- 2.4 1.6 1.8 18 2.4 100 -- Unit V V mA V A -- Collector-emitter breakdown voltage VI = 3.85V, IC = 400mA Collector-emitter saturation voltage VI = 3.4V, IC = 200mA VI = 3.85V Input current VI = 25V Clamping diode forward volltage IF = 400mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 4V, IC = 350mA, Ta = 25C * : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 10 120 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT Vo TIMING DIAGRAM INPUT 50% 50% Measured device OPEN PG RL OUTPUT OUTPUT 50% 50% 50 CL ton toff (1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50 VP = 3.85VP-P (2)Input-output conditions : RL = 25, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan.2000 MITSUBISHI SEMICONDUCTOR M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 500 Thermal Derating Factor Characteristics 2.0 Power dissipation Pd (W) 1.5 M54523P Collector current Ic (mA) 400 300 1.0 M54523FP 200 VI = 3.85V Ta = 75C Ta = 25C Ta = -20C 0.5 100 0 0 25 50 75 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Duty Cycle-Collector Characteristics (M54523P) 1 Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics (M54523P) 500 500 Collector current Ic (mA) Collector current Ic (mA) 400 2 400 1 300 3 4 5 6 7 300 2 200 *The collector current values represent the current per circuit. *Repeated frequencyy 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 100 100 3 4 5 6 7 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty Cycle-Collector Characteristics (M54523FP) Duty cycle (%) Duty Cycle-Collector Characteristics (M54523FP) 500 500 1 Collector current Ic (mA) 300 2 3 4 5 6 7 Collector current Ic (mA) 400 400 300 1 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 200 2 4 *The collector current values represent the current per circuit. 5 *Repeated frequency 10Hz 76 *The value the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 3 100 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Jan.2000 MITSUBISHI SEMICONDUCTOR M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE Input Characteristics 16 104 DC Amplification Factor Collector Current Characteristics 7 5 3 Input Current II (mA) 12 Ta = 75C Ta = 25C Ta = -20C DC amplification factor hFE VCE = 4V Ta = 75C Ta = 25C Ta = -20C 8 103 7 5 3 4 0 0 8 16 24 32 102 1 10 3 5 7 102 3 5 7 103 Input voltage VI (V) Grounded Emitter Transfer Characteristics 500 500 Collector current IcC (mA) Clamping Diode Characteristics Forward bias current IF (mA) Collector current Ic (mA) 400 VCE = 4V Ta = 75C Ta = 25C Ta = -20C 400 Ta = 75C Ta = 25C Ta = -20C 300 300 200 200 100 100 0 0 1 2 3 4 5 0 0 0.5 1.0 1.5 2.0 Input voltage VI (V) Forward bias voltage VF (V) Jan.2000 |
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